Name: SCTW40N120G2V
Brand: STMicroelectronics
SKU: SCTW40N120G2V
Availability: InStock
Rating: 5 (111 reviews)

SCTW40N120G2V

Per Riferimento Soltanto

Numero di parte	SCTW40N120G2V
Produttore	STMicroelectronics
Descrizione	SILICON CARBIDE POWER MOSFET 120
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 9 - lug 14 (Scegli una spedizione rapida)
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Stiamo offrendo SCTW40N120G2V per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTW40N120G2V

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Corrente - Scarico continuo (Id) @ 25 ° C	36A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V
Vgs (th) (Max) @ Id	4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Capacità di ingresso (Ciss) (Max) @ Vds	1233 pF @ 800 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	278W (Tc)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
temperatura di esercizio	-55°C ~ 200°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	HiP247™
Pacchetto / caso	TO-247-3

SCTW40N120G2V Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTW40N120G2V.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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