Name: SCTW35N65G2VAG
Brand: STMicroelectronics
SKU: SCTW35N65G2VAG
Availability: InStock
Rating: 5 (86 reviews)

SCTW35N65G2VAG

Per Riferimento Soltanto

Numero di parte	SCTW35N65G2VAG
Produttore	STMicroelectronics
Descrizione	SICFET N-CH 650V 45A HIP247
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 3 - ott 8 (Scegli una spedizione rapida)
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Stiamo offrendo SCTW35N65G2VAG per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTW35N65G2VAG

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	45A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V, 20V
Vgs (th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	1370 pF @ 400 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	240W (Tc)
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
temperatura di esercizio	-55°C ~ 200°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	HiP247™
Pacchetto / caso	TO-247-3

SCTW35N65G2VAG Packaging

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6. What is the process for return or replacement of SCTW35N65G2VAG?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTW35N65G2VAG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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