Name: SCTH35N65G2V-7
Brand: STMicroelectronics
SKU: SCTH35N65G2V-7
Availability: InStock
Rating: 5 (179 reviews)

SCTH35N65G2V-7

Per Riferimento Soltanto

Numero di parte	SCTH35N65G2V-7
Produttore	STMicroelectronics
Descrizione	SICFET N-CH 650V 45A H2PAK-7
Scheda dati
pacchetto	-
ECAD
A magazzino	5.112 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Stiamo offrendo SCTH35N65G2V-7 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTH35N65G2V-7

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	45A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V, 20V
Vgs (th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	1370 pF @ 400 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	208W (Tc)
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	H2PAK-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

SCTH35N65G2V-7 Packaging

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6. What is the process for return or replacement of SCTH35N65G2V-7?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTH35N65G2V-7.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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