Name: SCTH100N65G2-7AG
Brand: STMicroelectronics
SKU: SCTH100N65G2-7AG
Availability: InStock
Rating: 5 (93 reviews)

SCTH100N65G2-7AG

Per Riferimento Soltanto

Numero di parte	SCTH100N65G2-7AG
Produttore	STMicroelectronics
Descrizione	SICFET N-CH 650V 95A H2PAK-7
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 6 - lug 11 (Scegli una spedizione rapida)
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Stiamo offrendo SCTH100N65G2-7AG per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTH100N65G2-7AG

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	95A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V
Vgs (th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 18 V
Capacità di ingresso (Ciss) (Max) @ Vds	3315 pF @ 520 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	360W (Tc)
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	H2PAK-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

SCTH100N65G2-7AG Packaging

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6. What is the process for return or replacement of SCTH100N65G2-7AG?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCTH100N65G2-7AG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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