Name: RS6G120BGTB1
Brand: Rohm Semiconductor
SKU: RS6G120BGTB1
Availability: InStock
Rating: 5 (141 reviews)

RS6G120BGTB1

Per Riferimento Soltanto

Numero di parte	RS6G120BGTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 40V 210A, HSOP8, POWER MOSFE
Scheda dati
pacchetto	-
ECAD
A magazzino	6.282 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 15 - nov 20 (Scegli una spedizione rapida)
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Specifiche RS6G120BGTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4240 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	104W (Tc)
Rds On (Max) @ Id, Vgs	1.34mOhm @ 90A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSOP
Pacchetto / caso	8-PowerTDFN

RS6G120BGTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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RS6G120BGTB1

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