Name: RQ3G110ATTB
Brand: Rohm Semiconductor
SKU: RQ3G110ATTB
Availability: InStock
Rating: 5 (179 reviews)

RQ3G110ATTB

Per Riferimento Soltanto

Numero di parte	RQ3G110ATTB
Produttore	Rohm Semiconductor
Descrizione	PCH -40V -35A, HSMT8, POWER MOSF
Scheda dati
pacchetto	-
ECAD
A magazzino	25.827 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 15 - nov 20 (Scegli una spedizione rapida)
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Specifiche RQ3G110ATTB

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	P-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	11A (Ta), 35A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2750 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta)
Rds On (Max) @ Id, Vgs	12.4mOhm @ 11A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSMT (3.2x3)
Pacchetto / caso	8-PowerVDFN

RQ3G110ATTB Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RQ3G110ATTB.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RQ3G110ATTB

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