Name: RQ3E180BNTB1
Brand: Rohm Semiconductor
SKU: RQ3E180BNTB1
Availability: InStock
Rating: 5 (135 reviews)

RQ3E180BNTB1

Per Riferimento Soltanto

Numero di parte	RQ3E180BNTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 30V 39A MIDDLE POWER MOSFET:
Scheda dati
pacchetto	-
ECAD
A magazzino	8.460 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 8 - lug 13 (Scegli una spedizione rapida)
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Stiamo offrendo RQ3E180BNTB1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
Per elaborare il tuo RFQ, si prega di aggiungere RQ3E180BNTB1 con quantità in distinta. Heisener.com non richiede alcuna registrazione, richiedere un preventivo di RQ3E180BNTB1.

Specifiche RQ3E180BNTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	18A (Ta), 39A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	3500 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs	3.9mOhm @ 18A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSMT (3.2x3)
Pacchetto / caso	8-PowerVDFN

RQ3E180BNTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RQ3E180BNTB1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RQ3E180BNTB1

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