Name: RQ3E160ADTB1
Brand: Rohm Semiconductor
SKU: RQ3E160ADTB1
Availability: InStock
Rating: 5 (185 reviews)

RQ3E160ADTB1

Per Riferimento Soltanto

Numero di parte	RQ3E160ADTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 30V 16A MIDDLE POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	18.000 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche RQ3E160ADTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	16A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2550 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta)
Rds On (Max) @ Id, Vgs	4.5mOhm @ 16A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSMT (3.2x3)
Pacchetto / caso	8-PowerVDFN

RQ3E160ADTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RQ3E160ADTB1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RQ3E160ADTB1

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