Name: RQ3E100BNTB1
Brand: Rohm Semiconductor
SKU: RQ3E100BNTB1
Availability: InStock
Rating: 5 (144 reviews)

RQ3E100BNTB1

Per Riferimento Soltanto

Numero di parte	RQ3E100BNTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 30V 21A POWER MOSFET: RQ3E10
Scheda dati
pacchetto	-
ECAD
A magazzino	25.926 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	feb 14 - feb 19 (Scegli una spedizione rapida)
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Stiamo offrendo RQ3E100BNTB1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RQ3E100BNTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	10A (Ta), 21A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1100 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSMT (3.2x3)
Pacchetto / caso	8-PowerVDFN

RQ3E100BNTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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RQ3E100BNTB1

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