Name: RJ1P10BBHTL1
Brand: Rohm Semiconductor
SKU: RJ1P10BBHTL1
Availability: InStock
Rating: 5 (157 reviews)

RJ1P10BBHTL1

Per Riferimento Soltanto

Numero di parte	RJ1P10BBHTL1
Produttore	Rohm Semiconductor
Descrizione	NCH 100V 105A, TO-263AB, POWER M
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	gen 2 - gen 7 (Scegli una spedizione rapida)
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Specifiche RJ1P10BBHTL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	105A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	6V, 10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	8600 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	189W (Tc)
Rds On (Max) @ Id, Vgs	3mOhm @ 90A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263AB
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RJ1P10BBHTL1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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