Name: RJ1L12BGNTLL
Brand: Rohm Semiconductor
SKU: RJ1L12BGNTLL
Availability: InStock
Rating: 5 (117 reviews)

RJ1L12BGNTLL

Per Riferimento Soltanto

Numero di parte	RJ1L12BGNTLL
Produttore	Rohm Semiconductor
Descrizione	NCH 60V 120A POWER MOSFET : RJ1L
Scheda dati
pacchetto	-
ECAD
A magazzino	5.997 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 2 - ott 7 (Scegli una spedizione rapida)
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Stiamo offrendo RJ1L12BGNTLL per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RJ1L12BGNTLL

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	175 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	9000 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	192W (Tc)
Rds On (Max) @ Id, Vgs	2.9mOhm @ 40A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263AB
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RJ1L12BGNTLL Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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RJ1L12BGNTLL

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