Name: RJ1G12BGNTLL
Brand: Rohm Semiconductor
SKU: RJ1G12BGNTLL
Availability: InStock
Rating: 5 (115 reviews)

RJ1G12BGNTLL

Per Riferimento Soltanto

Numero di parte	RJ1G12BGNTLL
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 40V 120A LPTL
Scheda dati
pacchetto	-
ECAD
A magazzino	5.382 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 2 - ott 7 (Scegli una spedizione rapida)
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Stiamo offrendo RJ1G12BGNTLL per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RJ1G12BGNTLL

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	12500 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	178W (Tc)
Rds On (Max) @ Id, Vgs	1.86mOhm @ 50A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	LPTL
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RJ1G12BGNTLL Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RJ1G12BGNTLL.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RJ1G12BGNTLL

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