Name: RH6G040BGTB1
Brand: Rohm Semiconductor
SKU: RH6G040BGTB1
Availability: InStock
Rating: 5 (171 reviews)

RH6G040BGTB1

Per Riferimento Soltanto

Numero di parte	RH6G040BGTB1
Produttore	Rohm Semiconductor
Descrizione	NCH 40V 95A, HSMT8, POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	15.843 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Specifiche RH6G040BGTB1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	40A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1580 pF @ 20 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	59W (Tc)
Rds On (Max) @ Id, Vgs	3.6mOhm @ 40A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-HSMT (3.2x3)
Pacchetto / caso	8-PowerVDFN

RH6G040BGTB1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RH6G040BGTB1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RH6G040BGTB1

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