Name: RF4P060BGTCR
Brand: Rohm Semiconductor
SKU: RF4P060BGTCR
Availability: InStock
Rating: 5 (144 reviews)

RF4P060BGTCR

Per Riferimento Soltanto

Numero di parte	RF4P060BGTCR
Produttore	Rohm Semiconductor
Descrizione	NCH 100V 6A, HUML2020L8, POWER M
Scheda dati
pacchetto	-
ECAD
A magazzino	9.000 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 26 - dic 1 (Scegli una spedizione rapida)
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Stiamo offrendo RF4P060BGTCR per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RF4P060BGTCR

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	6A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	305 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2W (Ta)
Rds On (Max) @ Id, Vgs	53mOhm @ 6A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	DFN2020-8S
Pacchetto / caso	8-PowerUDFN

RF4P060BGTCR Packaging

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6. What is the process for return or replacement of RF4P060BGTCR?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RF4P060BGTCR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as RF4P060BGTCR pin diagram, RF4P060BGTCR datasheet?

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RF4P060BGTCR

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