Name: RD3R02BBHTL1
Brand: Rohm Semiconductor
SKU: RD3R02BBHTL1
Availability: InStock
Rating: 5 (75 reviews)

RD3R02BBHTL1

Per Riferimento Soltanto

Numero di parte	RD3R02BBHTL1
Produttore	Rohm Semiconductor
Descrizione	NCH 150V 20A, TO-252, POWER MOSF
Scheda dati
pacchetto	-
ECAD
A magazzino	7.464 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 1 - lug 6 (Scegli una spedizione rapida)
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Stiamo offrendo RD3R02BBHTL1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche RD3R02BBHTL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	6V, 10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	730 pF @ 75 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	50W (Tc)
Rds On (Max) @ Id, Vgs	81mOhm @ 10A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

RD3R02BBHTL1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RD3R02BBHTL1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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RD3R02BBHTL1

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