Name: R6535ENZ4C13
Brand: Rohm Semiconductor
SKU: R6535ENZ4C13
Availability: InStock
Rating: 5 (165 reviews)

R6535ENZ4C13

Per Riferimento Soltanto

Numero di parte	R6535ENZ4C13
Produttore	Rohm Semiconductor
Descrizione	650V 35A TO-247, LOW-NOISE POWER
Scheda dati
pacchetto	-
ECAD
A magazzino	1.713 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Stiamo offrendo R6535ENZ4C13 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche R6535ENZ4C13

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	35A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2600 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	379W (Tc)
Rds On (Max) @ Id, Vgs	115mOhm @ 18.1A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247G
Pacchetto / caso	TO-247-3

R6535ENZ4C13 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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R6535ENZ4C13

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