Name: R6030ENXC7G
Brand: Rohm Semiconductor
SKU: R6030ENXC7G
Availability: InStock
Rating: 5 (109 reviews)

R6030ENXC7G

Per Riferimento Soltanto

Numero di parte	R6030ENXC7G
Produttore	Rohm Semiconductor
Descrizione	600V 30A TO-220FM, LOW-NOISE POW
Scheda dati
pacchetto	-
ECAD
A magazzino	2.880 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 16 - nov 21 (Scegli una spedizione rapida)
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Servizi di consegna

Stiamo offrendo R6030ENXC7G per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche R6030ENXC7G

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	30A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2100 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	86W (Tc)
Rds On (Max) @ Id, Vgs	130mOhm @ 14.5A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220FM
Pacchetto / caso	TO-220-3 Full Pack

R6030ENXC7G Packaging

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6. What is the process for return or replacement of R6030ENXC7G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6030ENXC7G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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R6030ENXC7G

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