Name: R6025ANZFL1C8
Brand: Rohm Semiconductor
SKU: R6025ANZFL1C8
Availability: InStock
Rating: 5 (166 reviews)

R6025ANZFL1C8

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Numero di parte	R6025ANZFL1C8
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 600V 25A TO3
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Specifiche R6025ANZFL1C8

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	25A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	3250 pF @ 10 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	150W (Tc)
Rds On (Max) @ Id, Vgs	150mOhm @ 12.5A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3PF
Pacchetto / caso	TO-3P-3 Full Pack

R6025ANZFL1C8 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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R6025ANZFL1C8

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