Name: R6013VND3TL1
Brand: Rohm Semiconductor
SKU: R6013VND3TL1
Availability: InStock
Rating: 5 (77 reviews)

R6013VND3TL1

Per Riferimento Soltanto

Numero di parte	R6013VND3TL1
Produttore	Rohm Semiconductor
Descrizione	600V 13A TO-252, PRESTOMOS WITH
Scheda dati
pacchetto	-
ECAD
A magazzino	7.677 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 1 - lug 6 (Scegli una spedizione rapida)
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Stiamo offrendo R6013VND3TL1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche R6013VND3TL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	13A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V, 15V
Vgs (th) (Max) @ Id	6.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	900 pF @ 100 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	131W (Tc)
Rds On (Max) @ Id, Vgs	300mOhm @ 3A, 15V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

R6013VND3TL1 Packaging

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6. What is the process for return or replacement of R6013VND3TL1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6013VND3TL1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as R6013VND3TL1 pin diagram, R6013VND3TL1 datasheet?

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R6013VND3TL1

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