Name: R6003KND3TL1
Brand: Rohm Semiconductor
SKU: R6003KND3TL1
Availability: InStock
Rating: 5 (130 reviews)

R6003KND3TL1

Per Riferimento Soltanto

Numero di parte	R6003KND3TL1
Produttore	Rohm Semiconductor
Descrizione	MOSFET N-CH 600V 3A TO252
Scheda dati
pacchetto	-
ECAD
A magazzino	321 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 27 - dic 2 (Scegli una spedizione rapida)
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Stiamo offrendo R6003KND3TL1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche R6003KND3TL1

Produttore	Rohm Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	3A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	185 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	44W (Tc)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

R6003KND3TL1 Packaging

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6. What is the process for return or replacement of R6003KND3TL1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6003KND3TL1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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R6003KND3TL1

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