Name: ISL9N327AD3ST
Brand: Fairchild Semiconductor
SKU: ISL9N327AD3ST
Availability: InStock
Rating: 5 (108 reviews)

ISL9N327AD3ST

Per Riferimento Soltanto

Numero di parte	ISL9N327AD3ST
Produttore	Fairchild Semiconductor
Descrizione	N-CHANNEL POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	gen 14 - gen 19 (Scegli una spedizione rapida)
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Specifiche ISL9N327AD3ST

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	UltraFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	20A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	910 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	50W (Ta)
Rds On (Max) @ Id, Vgs	27mOhm @ 20A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252 (DPAK)
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

ISL9N327AD3ST Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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