Name: ISL9N318AD3ST
Brand: Fairchild Semiconductor
SKU: ISL9N318AD3ST
Availability: InStock
Rating: 5 (168 reviews)

ISL9N318AD3ST

Per Riferimento Soltanto

Numero di parte	ISL9N318AD3ST
Produttore	Fairchild Semiconductor
Descrizione	N-CHANNEL POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Stiamo offrendo ISL9N318AD3ST per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche ISL9N318AD3ST

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	UltraFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	30A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	900 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	55W (Ta)
Rds On (Max) @ Id, Vgs	18mOhm @ 30A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263AB
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

ISL9N318AD3ST Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of ISL9N318AD3ST.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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