Name: IPDQ65R099CFD7XTMA1
Brand: Infineon Technologies
SKU: IPDQ65R099CFD7XTMA1
Availability: InStock
Rating: 5 (172 reviews)

IPDQ65R099CFD7XTMA1

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Numero di parte	IPDQ65R099CFD7XTMA1
Produttore	Infineon Technologies
Descrizione	HIGH POWER_NEW
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 17 - nov 22 (Scegli una spedizione rapida)
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Specifiche IPDQ65R099CFD7XTMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	CoolMOS™
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	29A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1942 pF @ 400 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	186W (Tc)
Rds On (Max) @ Id, Vgs	99mOhm @ 9.7A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-HDSOP-22-1
Pacchetto / caso	22-PowerBSOP Module

IPDQ65R099CFD7XTMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPDQ65R099CFD7XTMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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IPDQ65R099CFD7XTMA1

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