Name: IPB65R190CFDATMA2
Brand: Infineon Technologies
SKU: IPB65R190CFDATMA2
Availability: InStock
Rating: 5 (109 reviews)

IPB65R190CFDATMA2

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Numero di parte	IPB65R190CFDATMA2
Produttore	Infineon Technologies
Descrizione	MOSFET N-CH 650V 17.5A TO263-3
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 22 - set 27 (Scegli una spedizione rapida)
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Stiamo offrendo IPB65R190CFDATMA2 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IPB65R190CFDATMA2

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	CoolMOS™ CFD2
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	17.5A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1850 pF @ 100 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	151W (Tc)
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TO263-3
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB65R190CFDATMA2 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB65R190CFDATMA2.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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IPB65R190CFDATMA2

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