Name: IPB072N15N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB072N15N3GE8187ATMA1
Availability: InStock
Rating: 5 (91 reviews)

IPB072N15N3GE8187ATMA1

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Numero di parte	IPB072N15N3GE8187ATMA1
Produttore	Infineon Technologies
Descrizione	MOSFET N-CH 150V 100A TO263-3
Scheda dati	IPB072N15N3GE8187ATMA1 Scheda dati
pacchetto	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ECAD
A magazzino	3.712 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 8 - nov 13 (Scegli una spedizione rapida)
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Stiamo offrendo IPB072N15N3GE8187ATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IPB072N15N3GE8187ATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ECAD
Serie	OptiMOS?
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Corrente - Scarico continuo (Id) @ 25 ° C	100A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	8V, 10V
Vgs (th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	5470pF @ 75V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	300W (Tc)
Rds On (Max) @ Id, Vgs	7.2 mOhm @ 100A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TO263-3-2
Pacchetto / caso	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Scheda tecnica IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1 Packaging

IPB072N15N3GE8187ATMA1 FAQ

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3. Are the IPB072N15N3GE8187ATMA1 price and inventory displayed accurate?

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6. What is the process for return or replacement of IPB072N15N3GE8187ATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IPB072N15N3GE8187ATMA1 we delivered, we will accept the replacement or return of the IPB072N15N3GE8187ATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IPB072N15N3GE8187ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as IPB072N15N3GE8187ATMA1 pin diagram, IPB072N15N3GE8187ATMA1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

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IPB072N15N3GE8187ATMA1

D# IPB072N15N3GE8187ATMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 150V 100A TO263-3

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IPB072N15N3GE8187ATMA1

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