Name: IMDQ75R016M1HXUMA1
Brand: Infineon Technologies
SKU: IMDQ75R016M1HXUMA1
Availability: InStock
Rating: 5 (185 reviews)

IMDQ75R016M1HXUMA1

Per Riferimento Soltanto

Numero di parte	IMDQ75R016M1HXUMA1
Produttore	Infineon Technologies
Descrizione	SILICON CARBIDE MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	set 30 - ott 5 (Scegli una spedizione rapida)
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Specifiche IMDQ75R016M1HXUMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	CoolSiC™
Tipo FET	N-Channel
Tecnologia	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	750 V
Corrente - Scarico continuo (Id) @ 25 ° C	98A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V, 20V
Vgs (th) (Max) @ Id	5.6V @ 14.9mA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 18 V
Capacità di ingresso (Ciss) (Max) @ Vds	2869 pF @ 500 V
Vgs (massimo)	+23V, -5V
Caratteristica FET	-
Dissipazione di potenza (max)	384W (Tc)
Rds On (Max) @ Id, Vgs	15mOhm @ 41.5A, 20A
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-HDSOP-22-1
Pacchetto / caso	22-PowerBSOP Module

IMDQ75R016M1HXUMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IMDQ75R016M1HXUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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IMDQ75R016M1HXUMA1

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