Name: IAUC120N06S5N032ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5N032ATMA1
Availability: InStock
Rating: 5 (158 reviews)

IAUC120N06S5N032ATMA1

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Numero di parte	IAUC120N06S5N032ATMA1
Produttore	Infineon Technologies
Descrizione	MOSFET_)40V 60V)
Scheda dati
pacchetto	-
ECAD
A magazzino	22.461 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 30 - gen 4 (Scegli una spedizione rapida)
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Stiamo offrendo IAUC120N06S5N032ATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IAUC120N06S5N032ATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	OptiMOS™-5
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tj)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	7V, 10V
Vgs (th) (Max) @ Id	3.4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	3446 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	94W (Tc)
Rds On (Max) @ Id, Vgs	3.23mOhm @ 60A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TDSON-8-34
Pacchetto / caso	8-PowerTDFN

IAUC120N06S5N032ATMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IAUC120N06S5N032ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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