Name: IAUC120N04S6N009ATMA1
Brand: Infineon Technologies
SKU: IAUC120N04S6N009ATMA1
Availability: InStock
Rating: 5 (132 reviews)

IAUC120N04S6N009ATMA1

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Numero di parte	IAUC120N04S6N009ATMA1
Produttore	Infineon Technologies
Descrizione	MOSFET N-CH 40V 120A 8TDSON-33
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 18 - nov 23 (Scegli una spedizione rapida)
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Stiamo offrendo IAUC120N04S6N009ATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IAUC120N04S6N009ATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	OptiMOS™
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	7V, 10V
Vgs (th) (Max) @ Id	3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	7360 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	150W (Tc)
Rds On (Max) @ Id, Vgs	0.9mOhm @ 60A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TDSON-8-33
Pacchetto / caso	8-PowerTDFN

IAUC120N04S6N009ATMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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