Name: IAUC100N04S6N028ATMA1
Brand: Infineon Technologies
SKU: IAUC100N04S6N028ATMA1
Availability: InStock
Rating: 5 (88 reviews)

IAUC100N04S6N028ATMA1

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Numero di parte	IAUC100N04S6N028ATMA1
Produttore	Infineon Technologies
Descrizione	IAUC100N04S6N028ATMA1
Scheda dati
pacchetto	-
ECAD
A magazzino	30.174 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 11 - lug 16 (Scegli una spedizione rapida)
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Stiamo offrendo IAUC100N04S6N028ATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IAUC100N04S6N028ATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	OptiMOS™
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Corrente - Scarico continuo (Id) @ 25 ° C	100A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	7V, 10V
Vgs (th) (Max) @ Id	3V @ 24µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	1781 pF @ 25 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	62W (Tc)
Rds On (Max) @ Id, Vgs	2.86mOhm @ 50A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TDSON-8
Pacchetto / caso	8-PowerTDFN

IAUC100N04S6N028ATMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IAUC100N04S6N028ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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