Name: GT035N10Q
Brand: Goford Semiconductor
SKU: GT035N10Q
Availability: InStock
Rating: 5 (139 reviews)

GT035N10Q

Per Riferimento Soltanto

Numero di parte	GT035N10Q
Produttore	Goford Semiconductor
Descrizione	MOSFET N-CH 100V 190A TO-247
Scheda dati
pacchetto	-
ECAD
A magazzino	180 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	gen 9 - gen 14 (Scegli una spedizione rapida)
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Specifiche GT035N10Q

Produttore	Goford Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	190A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	6516 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	277W (Tc)
Rds On (Max) @ Id, Vgs	3.5mOhm @ 30A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247
Pacchetto / caso	TO-247-3

GT035N10Q Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT035N10Q.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as GT035N10Q pin diagram, GT035N10Q datasheet?

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GT035N10Q

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