Name: GT025N06AM6
Brand: Goford Semiconductor
SKU: GT025N06AM6
Availability: InStock
Rating: 5 (170 reviews)

GT025N06AM6

Per Riferimento Soltanto

Numero di parte	GT025N06AM6
Produttore	Goford Semiconductor
Descrizione	N60V,170A,RD<2.0M@10V,VTH1.2V~2.
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 25 - ott 30 (Scegli una spedizione rapida)
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Specifiche GT025N06AM6

Produttore	Goford Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	170A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	5058 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	215W (Tc)
Rds On (Max) @ Id, Vgs	2mOhm @ 20A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-6
Pacchetto / caso	TO-263-7, D2PAK (6 Leads + Tab)

GT025N06AM6 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT025N06AM6.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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GT025N06AM6

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