Name: GT023N10T
Brand: Goford Semiconductor
SKU: GT023N10T
Availability: InStock
Rating: 5 (155 reviews)

GT023N10T

Per Riferimento Soltanto

Numero di parte	GT023N10T
Produttore	Goford Semiconductor
Descrizione	N100V, 140A,RD<2.7M@10V,VTH2.7V~
Scheda dati
pacchetto	-
ECAD
A magazzino	81 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 26 - ott 31 (Scegli una spedizione rapida)
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Specifiche GT023N10T

Produttore	Goford Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	140A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	8086 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	500W (Tc)
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220
Pacchetto / caso	TO-220-3

GT023N10T Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT023N10T.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as GT023N10T pin diagram, GT023N10T datasheet?

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GT023N10T

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