Name: G3R350MT12J
Brand: GeneSiC Semiconductor
SKU: G3R350MT12J
Availability: InStock
Rating: 5 (95 reviews)

G3R350MT12J

Per Riferimento Soltanto

Numero di parte	G3R350MT12J
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 11A TO263-7
Scheda dati
pacchetto	-
ECAD
A magazzino	11.241 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 8 - lug 13 (Scegli una spedizione rapida)
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Specifiche G3R350MT12J

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G3R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Corrente - Scarico continuo (Id) @ 25 ° C	11A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V
Vgs (th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Capacità di ingresso (Ciss) (Max) @ Vds	334 pF @ 800 V
Vgs (massimo)	±15V
Caratteristica FET	-
Dissipazione di potenza (max)	75W (Tc)
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R350MT12J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R350MT12J.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G3R350MT12J

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