Name: G3R350MT12J
Brand: GeneSiC Semiconductor
SKU: G3R350MT12J
Availability: InStock
Rating: 5 (95 reviews)

G3R350MT12J

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Numero di parte	G3R350MT12J
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 11A TO263-7
Scheda dati
pacchetto	-
ECAD
A magazzino	11.241 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 31 - gen 5 (Scegli una spedizione rapida)
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Specifiche G3R350MT12J

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G3R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Corrente - Scarico continuo (Id) @ 25 ° C	11A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V
Vgs (th) (Max) @ Id	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Capacità di ingresso (Ciss) (Max) @ Vds	334 pF @ 800 V
Vgs (massimo)	±15V
Caratteristica FET	-
Dissipazione di potenza (max)	75W (Tc)
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R350MT12J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(2)Obtain Requesting Return Authorizations
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G3R350MT12J

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