Name: G3R20MT17N
Brand: GeneSiC Semiconductor
SKU: G3R20MT17N
Availability: InStock
Rating: 5 (130 reviews)

G3R20MT17N

Per Riferimento Soltanto

Numero di parte	G3R20MT17N
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 100A SOT227
Scheda dati
pacchetto	-
ECAD
A magazzino	528 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 26 - dic 1 (Scegli una spedizione rapida)
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Stiamo offrendo G3R20MT17N per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche G3R20MT17N

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G3R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Corrente - Scarico continuo (Id) @ 25 ° C	100A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V
Vgs (th) (Max) @ Id	2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	400 nC @ 15 V
Capacità di ingresso (Ciss) (Max) @ Vds	10187 pF @ 1000 V
Vgs (massimo)	±15V
Caratteristica FET	-
Dissipazione di potenza (max)	523W (Tc)
Rds On (Max) @ Id, Vgs	26mOhm @ 75A, 15V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Chassis Mount
Pacchetto dispositivo fornitore	SOT-227
Pacchetto / caso	SOT-227-4, miniBLOC

G3R20MT17N Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R20MT17N.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G3R20MT17N

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