Name: G3R160MT17J
Brand: GeneSiC Semiconductor
SKU: G3R160MT17J
Availability: InStock
Rating: 5 (193 reviews)

G3R160MT17J

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Numero di parte	G3R160MT17J
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 18A TO263-7
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 26 - dic 1 (Scegli una spedizione rapida)
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Specifiche G3R160MT17J

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G3R™, LoRing™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Corrente - Scarico continuo (Id) @ 25 ° C	18A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V
Vgs (th) (Max) @ Id	2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 15 V
Capacità di ingresso (Ciss) (Max) @ Vds	854 pF @ 1000 V
Vgs (massimo)	±15V
Caratteristica FET	-
Dissipazione di potenza (max)	187W (Tc)
Rds On (Max) @ Id, Vgs	208mOhm @ 12A, 15V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R160MT17J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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G3R160MT17J

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