Name: G3R160MT12J-TR
Brand: GeneSiC Semiconductor
SKU: G3R160MT12J-TR
Availability: InStock
Rating: 5 (182 reviews)

G3R160MT12J-TR

Per Riferimento Soltanto

Numero di parte	G3R160MT12J-TR
Produttore	GeneSiC Semiconductor
Descrizione	1200V 160M TO-263-7 G3R SIC MOSF
Scheda dati
pacchetto	-
ECAD
A magazzino	210 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 8 - ott 13 (Scegli una spedizione rapida)
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Stiamo offrendo G3R160MT12J-TR per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
Per elaborare il tuo RFQ, si prega di aggiungere G3R160MT12J-TR con quantità in distinta. Heisener.com non richiede alcuna registrazione, richiedere un preventivo di G3R160MT12J-TR.

Specifiche G3R160MT12J-TR

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G3R™, LoRing™
Tipo FET	N-Channel
Tecnologia	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Corrente - Scarico continuo (Id) @ 25 ° C	19A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	15V, 18V
Vgs (th) (Max) @ Id	2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 15 V
Capacità di ingresso (Ciss) (Max) @ Vds	724 pF @ 800 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	110W (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 18V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R160MT12J-TR Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R160MT12J-TR.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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G3R160MT12J-TR

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