Name: G33N03D52
Brand: Goford Semiconductor
SKU: G33N03D52
Availability: InStock
Rating: 5 (81 reviews)

G33N03D52

Per Riferimento Soltanto

Numero di parte	G33N03D52
Produttore	Goford Semiconductor
Descrizione	N30V, 33A,RD<13M@10V,VTH1V~3V, D
Scheda dati
pacchetto	-
ECAD
A magazzino	14.910 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 29 - nov 3 (Scegli una spedizione rapida)
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Specifiche G33N03D52

Produttore	Goford Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	TrenchFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	33A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	782 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	29W (Tc)
Rds On (Max) @ Id, Vgs	13mOhm @ 16A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	DFN5*6
Pacchetto / caso	DFN5*6

G33N03D52 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G33N03D52.

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(2)Obtain Requesting Return Authorizations
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G33N03D52

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