Name: G2R50MT33K
Brand: GeneSiC Semiconductor
SKU: G2R50MT33K
Availability: InStock
Rating: 5 (123 reviews)

G2R50MT33K

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Numero di parte	G2R50MT33K
Produttore	GeneSiC Semiconductor
Descrizione	3300V 50M TO-247-4 SIC MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 8 - lug 13 (Scegli una spedizione rapida)
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Specifiche G2R50MT33K

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G2R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Corrente - Scarico continuo (Id) @ 25 ° C	63A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	20V
Vgs (th) (Max) @ Id	3.5V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	340 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	7301 pF @ 1000 V
Vgs (massimo)	+25V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	536W (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247-4
Pacchetto / caso	TO-247-4

G2R50MT33K Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G2R50MT33K.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G2R50MT33K

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