Name: G2R1000MT33J
Brand: GeneSiC Semiconductor
SKU: G2R1000MT33J
Availability: InStock
Rating: 5 (74 reviews)

G2R1000MT33J

Per Riferimento Soltanto

Numero di parte	G2R1000MT33J
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 4A TO263-7
Scheda dati
pacchetto	-
ECAD
A magazzino	11.016 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 11 - lug 16 (Scegli una spedizione rapida)
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Specifiche G2R1000MT33J

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G2R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Corrente - Scarico continuo (Id) @ 25 ° C	4A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	20V
Vgs (th) (Max) @ Id	3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	238 pF @ 1000 V
Vgs (massimo)	+20V, -5V
Caratteristica FET	-
Dissipazione di potenza (max)	74W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263-7
Pacchetto / caso	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G2R1000MT33J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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G2R1000MT33J

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