Name: G2R1000MT17D
Brand: GeneSiC Semiconductor
SKU: G2R1000MT17D
Availability: InStock
Rating: 5 (159 reviews)

G2R1000MT17D

Per Riferimento Soltanto

Numero di parte	G2R1000MT17D
Produttore	GeneSiC Semiconductor
Descrizione	SIC MOSFET N-CH 4A TO247-3
Scheda dati
pacchetto	-
ECAD
A magazzino	12.009 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 18 - nov 23 (Scegli una spedizione rapida)
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Specifiche G2R1000MT17D

Produttore	GeneSiC Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	G2R™
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Corrente - Scarico continuo (Id) @ 25 ° C	5A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	20V
Vgs (th) (Max) @ Id	5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 20 V
Capacità di ingresso (Ciss) (Max) @ Vds	111 pF @ 1000 V
Vgs (massimo)	+25V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	44W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247-3
Pacchetto / caso	TO-247-3

G2R1000MT17D Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G2R1000MT17D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G2R1000MT17D

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