Name: FQH90N10V2
Brand: Fairchild Semiconductor
SKU: FQH90N10V2
Availability: InStock
Rating: 5 (126 reviews)

FQH90N10V2

Per Riferimento Soltanto

Numero di parte	FQH90N10V2
Produttore	Fairchild Semiconductor
Descrizione	N-CHANNEL POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	feb 14 - feb 19 (Scegli una spedizione rapida)
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Specifiche FQH90N10V2

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	QFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	105A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	191 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	6150 pF @ 25 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	330W (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 52.5A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-247AD
Pacchetto / caso	TO-247-3

FQH90N10V2 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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