Name: FQD60N03LTM
Brand: Fairchild Semiconductor
SKU: FQD60N03LTM
Availability: InStock
Rating: 5 (116 reviews)

FQD60N03LTM

Per Riferimento Soltanto

Numero di parte	FQD60N03LTM
Produttore	Fairchild Semiconductor
Descrizione	N-CHANNEL POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 29 - nov 3 (Scegli una spedizione rapida)
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Stiamo offrendo FQD60N03LTM per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche FQD60N03LTM

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	QFET™
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	30A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	5V, 10V
Vgs (th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	900 pF @ 15 V
Vgs (massimo)	±16V
Caratteristica FET	-
Dissipazione di potenza (max)	45W (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ 30A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252 (DPAK)
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

FQD60N03LTM Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQD60N03LTM.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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