Name: FQB85N06TM
Brand: Fairchild Semiconductor
SKU: FQB85N06TM
Availability: InStock
Rating: 5 (150 reviews)

FQB85N06TM

Per Riferimento Soltanto

Numero di parte	FQB85N06TM
Produttore	Fairchild Semiconductor
Descrizione	N-CHANNEL POWER MOSFET
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 21 - ott 26 (Scegli una spedizione rapida)
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Specifiche FQB85N06TM

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	QFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	85A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	112 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4120 pF @ 25 V
Vgs (massimo)	±25V
Caratteristica FET	-
Dissipazione di potenza (max)	3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 42.5A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-263 (D2PAK)
Pacchetto / caso	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

FQB85N06TM Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQB85N06TM.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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FQB85N06TM

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