Name: FQA9N90-F109
Brand: Fairchild Semiconductor
SKU: FQA9N90-F109
Availability: InStock
Rating: 5 (170 reviews)

FQA9N90-F109

Per Riferimento Soltanto

Numero di parte	FQA9N90-F109
Produttore	Fairchild Semiconductor
Descrizione	POWER FIELD-EFFECT TRANSISTOR, 8
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	ott 28 - nov 2 (Scegli una spedizione rapida)
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Specifiche FQA9N90-F109

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	QFET®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Corrente - Scarico continuo (Id) @ 25 ° C	8.6A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2700 pF @ 25 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	240W (Tc)
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.3A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3PN
Pacchetto / caso	TO-3P-3, SC-65-3

FQA9N90-F109 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQA9N90-F109.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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