Name: FDP039N08B-F102
Brand: Fairchild Semiconductor
SKU: FDP039N08B-F102
Availability: InStock
Rating: 5 (121 reviews)

FDP039N08B-F102

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Numero di parte	FDP039N08B-F102
Produttore	Fairchild Semiconductor
Descrizione	MOSFET N-CH 80V 120A TO220-3
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	lug 1 - lug 6 (Scegli una spedizione rapida)
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Stiamo offrendo FDP039N08B-F102 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche FDP039N08B-F102

Produttore	Fairchild Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	PowerTrench®
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Corrente - Scarico continuo (Id) @ 25 ° C	120A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	9450 pF @ 40 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	214W (Tc)
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220-3
Pacchetto / caso	TO-220-3

FDP039N08B-F102 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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