Name: BTS113AE3064NKSA1
Brand: Infineon Technologies
SKU: BTS113AE3064NKSA1
Availability: InStock
Rating: 5 (143 reviews)

BTS113AE3064NKSA1

Per Riferimento Soltanto

Numero di parte	BTS113AE3064NKSA1
Produttore	Infineon Technologies
Descrizione	MOSFET N-CH 60V 11.5A TO-220AB
Scheda dati
pacchetto	TO-220-3
ECAD
A magazzino	4.032 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 24 - dic 29 (Scegli una spedizione rapida)
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Modalità di pagamento
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Stiamo offrendo BTS113AE3064NKSA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche BTS113AE3064NKSA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	TO-220-3
ECAD
Serie	TEMPFET?
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Corrente - Scarico continuo (Id) @ 25 ° C	11.5A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V
Vgs (th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Capacità di ingresso (Ciss) (Max) @ Vds	560pF @ 25V
Vgs (massimo)	±10V
Caratteristica FET	-
Dissipazione di potenza (max)	40W (Tc)
Rds On (Max) @ Id, Vgs	170 mOhm @ 5.8A, 4.5V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	P-TO220AB
Pacchetto / caso	TO-220-3

BTS113AE3064NKSA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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Numero di parte

Produttore

Descrizione

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BTS113AE3064NKSA1

D# 2156-BTS113AE3064NKSA1-IT-ND

Rochester Electronics LLC

MOSFET N-CH 60V 11.5A TO220AB

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BTS113AE3064NKSA1

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