Name: BSB104N08NP3GXUMA1
Brand: Infineon Technologies
SKU: BSB104N08NP3GXUMA1
Availability: InStock
Rating: 5 (147 reviews)

BSB104N08NP3GXUMA1

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Numero di parte	BSB104N08NP3GXUMA1
Produttore	Infineon Technologies
Descrizione	TRENCH 40<-<100V
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 16 - nov 21 (Scegli una spedizione rapida)
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Specifiche BSB104N08NP3GXUMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Corrente - Scarico continuo (Id) @ 25 ° C	13A (Ta), 50A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2100 pF @ 40 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	2.8W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
temperatura di esercizio	-40°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	MG-WDSON-2-6
Pacchetto / caso	DirectFET™ Isometric MP

BSB104N08NP3GXUMA1 Packaging

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6. What is the process for return or replacement of BSB104N08NP3GXUMA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSB104N08NP3GXUMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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